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Hassane Ouazzani Chahdi
Hassane Ouazzani Chahdi
Lille University of Science and Technology
algan gan
Analytical chemistry
Optoelectronics
Materials science
gas concentration
4
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5
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0
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Mechanisms of a Rectifying TiN Gate Contact for AlGaN/GaN HEMTs on Silicon Substrate
2020
IEEE Transactions on Nanotechnology
Hassane Ouazzani Chahdi
Brahim Benbakhti
Maghnia Mattalah
Jean-Claude Gerbedoen
Abdelatif Jaouad
Nour-Eddine Bourzgui
Ali Soltani
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A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs
2020
IEEE Transactions on Electron Devices
S. J. Duffy
Brahim Benbakhti
Wei Dong Zhang
K. Ahmeda
Karol Kalna
M. Boucherta
M. Mattalah
Hassane Ouazzani Chahdi
Nour-Eddine Bourzgui
Ali Soltani
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A Highly Porous and Conductive Composite Gate Electrode for NO, NO2, O2, H2 and NH3 Exhaust Gas Sensors
2020
Hassane Ouazzani Chahdi
Omar Helli
Nour-Eddine Bourzgui
Leo Breuil
David Danovitch
Paul L. Voss
Suresh Sundaram
Vincent Aubry
Yacine Halfaya
Abdallah Ougazzaden
Jean-Paul Salvestrini
Hassan Maher
Ali Soltani
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Sensors based on AlGaN/GaN HEMT for fast H 2 and O 2 detection and measurement at high temperature
2019
SENSORS | IEEE Sensors
Hassane Ouazzani Chahdi
Abdallah Ougazzaden
Jean-Paul Salvestrini
Hassan Maher
Ali Soltani
Omar Helli
Nour-Eddine Bourzgui
Leo Breuil
David Danovitch
Paul L. Voss
Suresh Sundaram
Vincent Aubry
Yacine Halfaya
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