Improved performance of multi-giga bit NAND flash using channel orientation

In this paper, we report the enhanced performance of multi-giga bit NAND flash memory through the combined effects of uniaxial compressive stress and -oriented channel engineering. Using this method, cell current increased more than 29% owing to the mobility enhancement of the narrow width (60 nm) flash cell. Reduced interface trap with the active edge of channel resulted in the endurance characteristic improvement ~5%.