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Jsc «Niime», Moscow, Russia
Jsc «Niime», Moscow, Russia
Materials science
Optoelectronics
Electronic engineering
Epitaxy
Impurity
5
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0
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Dependence of Silicon Film Thickness on SOI-Lateral Junctionless MOSFET’s Parameters
2019
Alexey S. Klyuchnikov
Jsc «Niime», Moscow, Russia
Anton Y. Krasyukov
Evgenia A. Artamonova
Mikhail A. Korolev
Darya I. Efimova
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Impact of Location of Drain-Source Areas Contacts on Junctionless JLT MOSFETs Parameters
2018
M A Korolev
A.S. Klyuchnikov
D.I. Efimova
Jsc «Niime», Moscow, Russia
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Junctionless MOS-Transistor with Low Subthreshold Current
2018
M A Korolev
A.S. Klyuchnikov
D.I. Efimova
Jsc «Niime», Moscow, Russia
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Study on Effect of Electrically Active Impurities Comming from Trimethylgallium at the Different Methods of it Synthesis on Electrophysical Characteristics of Gallium Arsenide Epitaxial Layers
2018
M. V. Revin
Jsc Rpc Salut, Nizhny Novgorod, Russia
A. P. Kotkov
V. A. Ivanov
Yu.F. Radkov
N.V. Svinkov
A. N. Artemov
B. G. Gribov
Jsc «Niime», Moscow, Russia
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Circuit Engineering Modeling of Single Event Effects under Impact of Heavy-Charged Particles in SUB-100 NM CMOS ICs
2017
Anatoly A. Smolin
Jsc «ENGOs Spels», Moscow, Russia
Anna B. Boruzdina
Anastasia V. Ulanova
Andrey V. Yanenko
A.V. Sogoyan
A.Y. Nikiforof
V. A. Telets
A. I. Chumakov
N. A. Shelepin
Jsc «Niime», Moscow, Russia
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