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D.I. Efimova
D.I. Efimova
Materials science
Transistor
Electronic engineering
Subthreshold conduction
Optoelectronics
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Impact of Location of Drain-Source Areas Contacts on Junctionless JLT MOSFETs Parameters
2018
M A Korolev
A.S. Klyuchnikov
D.I. Efimova
Jsc «Niime», Moscow, Russia
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