FDSOI devices: A solution to achieve low junction leakage with low temperature processes (≤ 650°C)
2012
In this paper, we demonstrate low junction leakage for devices fabricated at low temperature (≤ 650°C). This is explained by the reduced channel thickness of our device (6 nm). We show this through both experimental data and KMC simulations that enable to understand the origin of the leakage reduction.
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