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Benjamin Vincent

Katholieke Universiteit Leuven
IMEC

94

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1721

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TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETs

2015 IEEE Transactions on Electron Devices
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Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition

2015 Thin Solid Films
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Extended X-ray absorption fine structure investigation of Sn local environment in strained and relaxed epitaxial Ge1−xSnx films

2015 Journal of Applied Physics
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Integration aspects of strained Ge pFETs

2014 Solid-state Electronics
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Strained Ge FINfet structures fabricated by selective epitaxial growth

2014 SiGeTDM | International SiGe Technology and Device Meeting
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Strained Ge FinFET structures fabricated by selective epitaxial growth

2014 SiGeTDM | International SiGe Technology and Device Meeting
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Band alignment at interfaces of amorphous Al2O3 with Ge1−xSnx- and strained Ge-based channels

2014 Applied Physics Letters
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Long-wavelength silicon photonic integrated circuits

2014 GFP | International Conference on Group IV Photonics
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Silicon-based heterogeneous photonic integrated circuits for the mid-infrared

2013 Optical Materials Express
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Si1-yGey or Ge1-zSnz Source/Drain Stressors on Strained Si1-xGex-Channel P-Type Field-Effect Transistors: A Technology Computer-Aided Design Study

2013 Japanese Journal of Applied Physics
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