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R. Westphalen

Royal Institute of Technology

6

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Growth of quaternary InP-based materials by LP-MOVPE using TBA and TBP in N 2 ambient

2000 Journal of Electronic Materials
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Comparison of carbon doping of InGaAs and GaAs by CBr4 using hydrogen or nitrogen as carrier gas in LP-MOVPE

1999 Journal of Crystal Growth
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Systematics of electrical conductivity across InP to GaAs wafer fused interfaces

1998 IPRM | International Conference on Indium Phosphide and Related Materials
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Wafer fused p-InP/p-GaAs heterojunctions

1998 Journal of Applied Physics
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