Growth of quaternary InP-based materials by LP-MOVPE using TBA and TBP in N 2 ambient

We have investigated the growth of quaternary In1−xGaxAsyP1−y/InP materials using TBA and TBP in a N2 ambient. This process improves significantly the uniformity of In1−xGaxAs/InP QWs whereas it does not improve the quaternary Q(1.3)/InP uniformity compared to the conventional process utilizing AsH3 and PH3 in H2. The effect on the x and y uniformity for different combinations of the group-V precursors TBA, TBP, PH3, and AsH3 with the carrier gases H2 and N2 is evaluated. Advantages with the TBA/TBP/N2 process are discussed.