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Chang Young Kang

SEMATECH

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Understanding and improving SILC behavior under TDDB stress in full gate-last high-k/metal gate nMOSFETs

2012 VLSI-TSA | International Symposium on VLSI Technology, Systems, and Applications
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Improved high-k/metal gate lifetime via improved SILC understanding and mitigation

2011 IEDM | International Electron Devices Meeting
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The Effect of Nanoscale Nonuniformity of Oxygen Vacancy on Electrical and Reliability Characteristics of $\hbox{HfO}_{2}$ MOSFET Devices

2008 IEEE Electron Device Letters
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