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M. Vinet
M. Vinet
IBM
Electron mobility
Materials science
Optoelectronics
Silicon
Electronic engineering
3
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4
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0
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Poisson-Schrödinger simulation of inversion charge in FDSOI MOSFET down to 0K - Towards compact modeling for cryo CMOS application
2020
EUROSOI-ULIS | Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
M. Aouad
Sebastien Martinie
François Triozon
Thierry Poiroux
M. Vinet
Gérard Ghibaudo
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Carrier Mobility Variation Induced by the Substrate Bias in Ω-gate SOI Nanowire MOSFETs
2019
S3S | IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference
F. E. Bergamaschi
T. A. Ribeiro
Bruna Cardoso Paz
M.M. De Souza
S. Barraud
M. Casse
M. Vinet
O. Faynot
Marcelo Antonio Pavanello
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Impact of source/drain silicon cap on FDSOI SiGe pMOSFET performance
2015
S3S | IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference
E. Augendre
S. Maitrejean
B. De Salvo
L. Grenouillet
R. Wacquez
M. Vinet
O. Faynot
Pierre Morin
Nicolas Loubet
Qing Liu
F. Chafik
S. Pilorget
B. Lherron
H. Kothari
Yann Mignot
Y. Escarabajal
F. Allibert
Kangguo Cheng
Bruce B. Doris
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