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Chin-Yuan Ko
Chin-Yuan Ko
TSMC
Electronic engineering
Engineering
MOSFET
Time-dependent gate oxide breakdown
Gate oxide
3
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8
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A CDM-like damage mechanism for multiple power domains fabricated with Deep N-well processes
2017
IRPS | International Reliability Physics Symposium
Yu-Lin Chu
Hsi-Yu Kuo
Jinn-Wen Young
Y. S. Tsai
Chin-Yuan Ko
Ming-Yi Wang
Chuan-Li Chang
Bill Kiang
Kenneth Wu
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Drain biased TDDB lifetime model for ultra thin gate oxide
2004
IRPS | International Reliability Physics Symposium
Chin-Yuan Ko
Y. S. Tsai
P.J. Liao
Junying Wang
Anthony S. Oates
Kenneth Wu
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Gate oxide multiple soft breakdown (Multi-SBD) impact on CMOS inverter
2004
IRPS | International Reliability Physics Symposium
Huey-Ming Huang
Chin-Yuan Ko
M.-L. Yang
P.J. Liao
Junying Wang
Anthony S. Oates
Kenneth Wu
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Citations (4)
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