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Steve Mittl
Steve Mittl
IBM
Electronic engineering
Metal gate
Engineering
High-κ dielectric
Voltage
5
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65
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Investigation of emerging middle-of-line poly gate-to-diffusion contact reliability issues
2012
IRPS | International Reliability Physics Symposium
Fen Chen
Steve Mittl
Michael A. Shinosky
Ann Swift
Rick Kontra
Brent A. Anderson
John M. Aitken
Yanfeng Wang
Emily R. Kinser
Mahender Kumar
Yun Wang
Terence Kane
Kai D. Feng
William K. Henson
Dan Mocuta
Di-An Li
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Citations (22)
Reliability characterization of 32nm high-k metal gate SOI technology with embedded DRAM
2012
IRPS | International Reliability Physics Symposium
Steve Mittl
Ann Swift
Ernest Y. Wu
Dimitris P. Ioannou
Fen Chen
Greg Massey
Nilufa Rahim
Michael J. Hauser
Paul A. Hyde
Joe Lukaitis
Stew Rauch
Sudesh Saroop
Yanfeng Wang
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Burn-in stress induced BTI degradation and post-burn-in high temperature anneal (Bake) effects in advanced HKMG and oxynitride based CMOS ring oscillators
2012
IRPS | International Reliability Physics Symposium
Dimitris P. Ioannou
Steve Mittl
Dave Brochu
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Positive Bias Temperature Instability Effects in nMOSFETs With HfO 2 /TiN Gate Stacks
2009
Dimitris P. Ioannou
Steve Mittl
Giuseppe La Rosa
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Citations (23)
Positive Bias Temperature Instability Effects in advanced High-k / Metal Gate NMOSFETs
2008
IIRW | International Integrated Reliability Workshop
Dimitris P. Ioannou
Steve Mittl
Giuseppe Larosa
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Citations (5)
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