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Shane Todd
Shane Todd
Agency for Science, Technology and Research
Optoelectronics
Analytical chemistry
Electronic engineering
Materials science
Wide-bandgap semiconductor
5
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138
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Raman Scattering and PL Studies on AlGaN/GaN HEMT Layers on 200 mm Si(111)
2012
World Academy of Science, Engineering and Technology, International Journal of Electrical, Computer, Energetic, Electronic and Communication Engineering
Weizhu Wang
Shane Todd
S B Dolmanan
Kean Boon Lee
Li Yuan
Haifeng Sun
S. L. Selvaraj
M. Krishnakumar
Guo-Qiang Lo
S. Tripathy
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Citations (2)
AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)
2012
Applied Physics Letters
S. Tripathy
Vivian Kaixin Lin
S. B. Dolmanan
Joyce Pei Ying Tan
R. S. Kajen
Lakshmi Kanta Bera
Siew Lang Teo
M. Krishna Kumar
S. Arulkumaran
Geok Ing Ng
S. Vicknesh
Shane Todd
Weizhu Wang
Guo-Qiang Lo
Hong Li
Dong-Chan Lee
Sang Do Han
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Citations (84)
Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate
2012
Japanese Journal of Applied Physics
S. Arulkumaran
Geok Ing Ng
S. Vicknesh
Hong Wang
Kian Siong Ang
Joyce Pei Ying Tan
Vivian Kaixin Lin
Shane Todd
Guo-Qiang Lo
S. Tripathy
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Citations (52)
Low frequency noise investigation of AlGaN/GaNOn silicon Schottky diode
2011
Yihu Li
Yong-Zhong Xiong
S. Arulkumaran
Lei Wang
Wang Ling Goh
Geok Ing Ng
Shane Todd
Patrick Guo-Qiang Lo
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A compact model of AlGaN/GaN on silicon Schottky diode and its application
2011
Yihu Li
Lei Wang
S. Arulkumaran
Yong-Zhong Xiong
Geok Ing Ng
Wang Ling Goh
Shane Todd
Patrick Guo-Qiang Lo
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