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Raman Scattering and PL Studies on AlGaN/GaN HEMT Layers on 200 mm Si(111)
Raman Scattering and PL Studies on AlGaN/GaN HEMT Layers on 200 mm Si(111)
2012
Weizhu Wang
Shane Todd
S B Dolmanan
Kean Boon Lee
Li Yuan
Haifeng Sun
S. L. Selvaraj
M. Krishnakumar
Guo-Qiang Lo
S. Tripathy
Keywords:
Raman scattering
Analytical chemistry
High-electron-mobility transistor
Electronic engineering
Materials science
algan gan
Optoelectronics
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