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S. B. Dolmanan

Agency for Science, Technology and Research

18

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208

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Influence of PECVD deposited SiN x passivation layer thickness on In0.18Al0.82N/GaN/Si HEMT

2015 Journal of Physics D
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Comment on “Determination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system” [Appl. Phys. Lett. 105, 232113 (2014)]

2015 Applied Physics Letters
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A dual‐character InGaN/GaN multiple quantum well device for electroluminescence and photovoltaic absorption of near‐mutually exclusive wavelengths

2014 Physica Status Solidi (c)
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Needles and Haystacks: Influence of Catalytic Metal Nanoparticles on Structural and Vibrational Properties and Morphology of Silicon Nanowires Synthesized by Metal-Assisted Chemical Etching

2013
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Effect of Ge Diffusion on AlxGa1-xN/GaN High Electron Mobility Transistors on a Thin Silicon-On-Insulator

2013 ECS Solid State Letters
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Effects of doping and indium inclusions on the structural and optical properties of InN thin films grown by MOCVD

2012 Journal of Physics D
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Influence of catalytic gold and silver metal nanoparticles on structural, optical, and vibrational properties of silicon nanowires synthesized by metal-assisted chemical etching

2012 Journal of Applied Physics
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Improved OFF-state breakdown voltage in AlGaN/GaN HEMTs grown on 150-mm diameter silicon-on-insulator (SOI) substrate

2012 DRC | Device Research Conference
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AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

2012 Applied Physics Letters
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AlxGa1?xN/GaN heterostructures on a thin silicon-on-insulator substrate for metal?semiconductor?metal photodetectors

2011 Journal of Physics D
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Citations (5)