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Yoshiaki Toyoshima
Yoshiaki Toyoshima
Toshiba
Materials science
Optoelectronics
MOSFET
Electronic engineering
Silicon
5
Papers
27
Citations
0.01
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A study on aggressive proximity of embedded SiGe with comprehensive source drain extension engineering for 32 nm node high-performance pMOSFET technology
2009
ESSDERC | European Solid-State Device Research Conference
Hiroki Okamoto
Nobuaki Yasutake
N. Kusunoki
K. Adachi
Hiroshi Itokawa
Kiyotaka Miyano
T. Ishida
Akira Hokazono
Shigeru Kawanaka
Ichiro Mizushima
A. Azuma
Yoshiaki Toyoshima
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Low-cost and reliable packaging technology for stacked MCP with MEMS and control IC chips
2009
Mitsuyoshi Endo
Akihiro Kojima
Yoshiaki Shimooka
Yoshiaki Sugizaki
Hiroaki Yamazaki
Etsuji Ogawa
Tamio Ikehashi
Tatsuya Ohguro
Susumu Obata
Yusaku Asano
Takeshi Miyagi
I. Mori
Yoshiaki Toyoshima
Hideki Shibata
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Citations (1)
FinFET: the prospective multi-gate device for future SoC applications
2006
ESSDERC | European Solid-State Device Research Conference
Satoshi Inaba
K. Okano
Takashi Izumida
A. Kaneko
H. Kawasaki
Atsushi Yagishita
Takahisa Kanemura
T. Ishida
Nobutoshi Aoki
K. Ishimaru
Kyoichi Suguro
Kazuhiro Eguchi
Yoshitaka Tsunashima
Yoshiaki Toyoshima
Hidemi Ishiuchi
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Citations (2)
Dopant redistribution in dual gate W-polycide CMOS and its improvement by RTA
1989
VLSIT | Symposium on VLSI Technology
H. Hayashida
Yoshiaki Toyoshima
Y. Suizu
K. Mitsuhashi
Hiroshi Iwai
K. Maeguchi
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Citations (24)
Study on gate oxide thickness dependence of hot carrier induced degradation for n-MOSFETs.
1988
VLSIT | Symposium on VLSI Technology
Yoshiaki Toyoshima
Fumiyoshi Matsuoka
H. Hayashida
Hiroshi Iwai
Koichi Kanzaki
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