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Qinglong Yan

Xidian University

3

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β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2

2021 Applied Physics Letters
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Lateral β-Ga2O3 MOSFETs with High Power Figure of Merit of 277 MW/cm2

2020 IEEE Electron Device Letters
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High-Performance Vertical b-Ga2O3 Schottky Barrier Diode with Implanted Edge Termination

2019 IEEE Electron Device Letters
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