Lateral β-Ga2O3 MOSFETs with High Power Figure of Merit of 277 MW/cm2

In this work, we have demonstrated high-performance lateral $\beta $ -Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) with state-of-art power figure-of-merit (P-FOM) and breakdown voltage (BV) by adopting a T-shape gate field-plate and source connected field-plate structures. Depletion-mode (D-mode) $\beta $ -Ga2O3 MOSFETs with gate-to-drain distance ( $\text{L}_{\sf GD}$ ) of $4.8~\mu \text{m}$ /17.8 $\mu \text{m}$ demonstrate a BV of 1.4 kV/2.9 kV and specific ON-resistance ( $\text{R}_{ \mathrm{\scriptscriptstyle ON}, {\sf sp}}$ ) of 7.08 $\text{m}\Omega \cdot $ cm2/46.2 $\text{m}\Omega \cdot $ cm2, respectively, yielding a high P-FOM of 277 MW/cm2 and averaged electrical field of 2.9 MV/cm for the device with $\text{L}_{\sf GD} = {\sf 4.8}\,\, \mu \text{m}$ . To the best of all the authors’ knowledge, this P-FOM of 277 MW/cm2 and BV = 2.9 kV are the highest values among all the lateral D-mode $\beta $ -Ga2O3 MOSFETs. Combined with negligible gate pulsed and drain pulsed current collapse and drain current on/off ratio of 109, these $\beta $ -Ga2O3 MOSFETs show a great potential for future power electronic applications.