High-Performance Vertical b-Ga2O3 Schottky Barrier Diode with Implanted Edge Termination

This work reports on implementing Mg implanted Edge Termination (ET), a simple but very useful technique to increase the breakdown voltage (BV) of the vertical b-Ga2O3 Schottky barrier diode (SBD). With this ET, vertical b-Ga2O3 SBD demonstrates a reverse blocking voltage of 1.55 kV and low specific on-resistance (Ron,sp) of 5.1 mY7cm2 at a lightly doped b-Ga2O3 layer with epitaxial thickness of 10 lm, yielding a high power figure-of-merit (P-FOM) of 0.47 GW/cm2. Combined with high forward current on/off ratio of 108 109, Schottky barrier height of 1.01 eV, and ideality factor of 1.05, vertical b-Ga2O3 Schottky Diode with implanted ET verifies its great potential for future power rectifiers.