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Raymond Krom
Raymond Krom
IMEC
Materials science
Semiconductor device modeling
Electronic engineering
Engineering
Logic gate
3
Papers
14
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0
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High-mobility Si 1−x Ge x -channel PFETs: Layout dependence and enhanced scalability, demonstrating 90% performance boost at narrow widths
2010
VLSIT | Symposium on VLSI Technology
Geert Eneman
Shinpei Yamaguchi
Claude Ortolland
Shinji Takeoka
Liesbeth Witters
T. Chiarella
P. Favia
Andriy Hikavyy
Jerome Mitard
Masaharu Kobayashi
Raymond Krom
Hugo Bender
Joshua Tseng
Wei-E Wang
Wilfried Vandervorst
Roger Loo
Philippe Absil
S. Biesemans
Thomas Hoffmann
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Citations (12)
III-V Devices for Advanced CMOS
2010
Niamh Waldron
Ngoc Duy Nguyen
Dennis Lin
Guy Brammertz
Geert Hellings
Benjamin Vincent
Andrea Firrincieli
Sonia Sioncke
Brice De Jaeger
Gang Wang
Raymond Krom
Jerome Mitard
Wei-E Wang
Matthias Passlack
Marc Heyns
Matty Caymax
Marc Meuris
S. Biesemans
Thomas Hoffmann
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High Hole-Mobility 65nm Biaxially-Strained Ge-pFETs: Fabrication, Analysis and Optimization
2010
The Japan Society of Applied Physics
Jerome Mitard
B. De Jaeger
Geert Eneman
A. Dobbie
Maksym Myronov
Masaharu Kobayashi
Jef Geypen
Hugo Bender
Benjamin Vincent
Raymond Krom
Jacopo Franco
G. Winderickx
E. Vrancken
Wendy Vanherle
Wenfei Wang
Joshua Tseng
R. Loo
K. De Meyer
Matty Caymax
L. Pantisano
D. R. Leadley
M. Meuris
P. Absil
S. Biesemans
T. Hoffmann
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Citations (2)
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