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H. Chong

State University of New York System

5

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28

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Study of CoFeB thickness and composition dependence in a modified CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction

2016 Journal of Applied Physics
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A CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction coupled to an in-plane exchange-biased magnetic layer

2015 Applied Physics Letters
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In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory

2015 IMW | International Memory Workshop
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In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory

2015 IMW | International Memory Workshop
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Statistical assessment of endurance degradation in high and low resistive states of the HfO 2 -based RRAM

2013 IRPS | International Reliability Physics Symposium
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Citations (5)