Effect of metal contact size on the metal-semiconductor junction characteristics
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Metal-semiconductor (M-S) contacts at subnanometer scale have exhibited interesting Schottky characteristics. The observed rectification behavior cannot be explained in the light of the conventional planar-Schottky model and needs to consider the Physics of nano-Schottky junction at very small dimensions. In this work, the effect of M-S contact size on the (1-V) characteristic is investigated. We used a modified nano-Schottky model to calculate the new depletion width, the enhanced surface potential, and the enhanced electric field at the interface which significantly affect the (I-V) characteristic. The experimental (I-V) plot for 7 nm metal tip was used to fit the parameters in the nano-Schottky model. The nano-Schottky model was used to simulate (I-V) plots for various diameters of metal tip contacts (7-100 nm). The results clearly demonstrate the transition in the (I-V) Schottky reversed rectification behavior from sub-10 nm contacts to the conventional (I-V) Schottky behavior at around 100 nm contacts.Keywords:
Metal–semiconductor junction
Schottky effect
Electrical contacts
We present experimental results on current injection from different metal electrodes into copper–phthalocyanine (Cu–Pc). The current–voltage (J–V) characteristics and current injected at the contact are investigated as a function of Schottky energy barrier, thickness of organic semiconductor, and temperature. These results are interpreted using a consistent description of J–V characteristics through the injection limited current in the case of high Schottky energy barriers and space charge limited current in the case of low Schottky energy barrier.
Schottky effect
Metal–semiconductor junction
Organic semiconductor
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The influence of the sidegate voltage on the Schottky barrier in the ion-implanted active layer via the Schottky pad on the semi-insulating GaAs substrate was observed, and the mechanism for such an influence was proposed.
Metal–semiconductor junction
Schottky effect
Barrier layer
Active layer
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In this work ballistic electron emission microscopy was used to probe on nanometer scale the local Schottky barrier height in metal-semiconductor (MS) contacts with an intentionally inhomogeneously prepared metallization. Schottky barrier maps of heterogeneous Au/Co/GaAs67P33(100)-Schottky contacts show areas with different barrier heights which can be correlated to different metallizations (Au or Co) at the interface. The local Schottky barrier height of the Co patches depends on their lateral extension. This result can be explained by the theory of the potential pinch-off effect in inhomogeneous MS contacts.
Metal–semiconductor junction
Schottky effect
Nanometre
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The Schottky barrier diodes were fabricated on n‐Si (100) using gold and platinum having different work functions. Aluminum was deposited on one side of Si and annealed to make good ohmic contacts. The junction parameters like ideality factor and Schottky barrier height were calculated from the I‐V characteristics. It has been observed that the Schottky barrier height of our Schottky diodes shows a very weak dependence on the metal work function indicating the dominance of interface states which cause the Fermi level pinning.
Ohmic contact
Metal–semiconductor junction
Schottky effect
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The Schottky barrier height of metals (Pt, Pd, Au, Ni, and Ti) on n-GaN has been measured by C-V and J-T methods. Comparison of the Schottky characteristics of those metals are discussed. Ni on GaN does not follow the rule of S=1 for GaN. The metal work function of Ni is high but the Schottky barrier height is low. The metal work function of Ag is about 4.26 eV, but the Schottky barrier height is about 1.2 eV. We think that it is because the interactions between the metal and the semiconductor dominate the Schottky behavior.
Metal–semiconductor junction
Schottky effect
Wide-bandgap semiconductor
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Aluminum n-type silicon Schottky barrier diodes which can be fabricated by a very simple process and exhibit near-ideal electricaI characteristics have recently been developed. In this paper, the processing and characteristics of such a Schottky barrier will be discussed. The I-V characteristics agree well with the theoretical thermionic emission model. The barrier height is determined from the saturation current, temperature dependence of forward current, and photoemission to be 0.69 ± 0.01 eV. Minority carrier injection from this Schottky barrier has been measured using a transistor structure with Al as emitter. Negligible minority carrier injection is found even up to high current levels. This is further confirmed by diode switching measurements. The low-frequency noise is very low and is comparable to the best p-n junctions and guard-ring Schottky barriers. This is particularly significant since it is the first time such good noise characteristics have been achieved for a Schottky barrier on n-Si without a guard ring. Excellent stability is found under life tests at elevated temperarures. These desirable features, coupled with the simple and economical processing which is completely compatible with present day integrated circuit technology, should make these Schottky barriers ideal in a variety of applications.
Metal–semiconductor junction
Saturation current
Thermionic emission
Schottky effect
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Hole Schottky barrier heights on GaAs have been studied experimentally by using a conventional metal–semiconductor–metal photodetector (MSMPD) structure. The Schottky barrier height for holes was obtained directly by the hole-current dominated dark current measurement of the MSMPD. With a thin, highly doped surface layer, control of the Schottky barrier heights for holes from 0.48 to 0.79 eV was obtained. By using these engineered Schottky contacts in the MSMPDs, over three orders of magnitude reduction in the dark currents of the MSMPDs was achieved.
Metal–semiconductor junction
Schottky effect
Depletion region
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Schottky effect
Metal–semiconductor junction
Electrostatics
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The room temperature observation of quantum mechanical reflections of electrons at an aluminum/gallium arsenide Schottky barrier is reported here. Molecular-beam epitaxy was used to grow an AlAs/GaAs/AlAs double barrier resonant tunneling diode (RTD) followed by an epitaxial in situ grown aluminum/gallium arsenide Schottky barrier. This RTD was used to inject a nearly monoenergetic beam of electrons towards the Schottky barrier. The measured I–V curves show resonances associated with the reflections of electrons at the Schottky interface. Understanding the transport properties of hot electrons at a Schottky barrier may prove important for understanding the physics of metal base transistors and other device structures that employ the use of epitaxial metals.
Schottky effect
Metal–semiconductor junction
Arsenide
Rectangular potential barrier
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This work proposes a Schottky barrier extraction procedure which considers the thermionic field emission (TFE) model, image-force induced barrier lowering effect, and parasitic resistance. The accuracy of the Schottky barrier height extracted by the field emission (FE) model at forward bias and the TFE model at reverse bias is evaluated. The TFE model can obtain accurate SBH with low SBH (~0.3 eV) and high doping concentration (~1×l020 cm-3). It is thus recommended that the proposed extraction procedure could be used to study the Schottky junction precisely.
Thermionic emission
Metal–semiconductor junction
Schottky effect
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