Schottky energy barrier and charge injection in metal/copper–phthalocyanine/metal structures
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Abstract:
We present experimental results on current injection from different metal electrodes into copper–phthalocyanine (Cu–Pc). The current–voltage (J–V) characteristics and current injected at the contact are investigated as a function of Schottky energy barrier, thickness of organic semiconductor, and temperature. These results are interpreted using a consistent description of J–V characteristics through the injection limited current in the case of high Schottky energy barriers and space charge limited current in the case of low Schottky energy barrier.Keywords:
Schottky effect
Metal–semiconductor junction
Organic semiconductor
We present a theoretical model to describe electrical spin injection from a ferromagnetic contact into a conjugated organic semiconductor. In thermal equilibrium the magnetic contact is spin polarized, whereas the organic semiconductor is unpolarized. The organic semiconductor must be driven far out of local thermal equilibrium by an electric current to achieve significant spin current injection. However, if the injecting contact has metallic conductivity, its electron distribution cannot be driven far from thermal equilibrium by practical current densities. Thus, quasi-equilibration between the conjugated organic semiconductor and the metallic contact must be suppressed to achieve effective spin injection. This requires a spin-dependent barrier to electrical injection that may be due either to tunneling through the depletion region of a large Schottky barrier or to tunneling through a thin, insulating, interface layer. Schottky barrier formation on conjugated organic semiconductors differs from that on inorganic semiconductors inasmuch as contacts made to organic semiconductors often follow near-ideal Schottky behavior, thus permitting the energy barrier to electrical injection to be varied over a wide range by using metals with different work functions. In addition, insulating tunnel barriers to organic semiconductors based on organic molecules can be conveniently fabricated using self-assembly techniques.
Organic semiconductor
Metal–semiconductor junction
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We present experimental results on current injection from different metal electrodes into copper–phthalocyanine (Cu–Pc). The current–voltage (J–V) characteristics and current injected at the contact are investigated as a function of Schottky energy barrier, thickness of organic semiconductor, and temperature. These results are interpreted using a consistent description of J–V characteristics through the injection limited current in the case of high Schottky energy barriers and space charge limited current in the case of low Schottky energy barrier.
Schottky effect
Metal–semiconductor junction
Organic semiconductor
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The influence of the sidegate voltage on the Schottky barrier in the ion-implanted active layer via the Schottky pad on the semi-insulating GaAs substrate was observed, and the mechanism for such an influence was proposed.
Metal–semiconductor junction
Schottky effect
Barrier layer
Active layer
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Equations are derived that describe the effect of space charge on current injection into insulators under the approximations that, in the absence of space charge, lead to either the Fowler-Nordheim equation or the Schottky equation. The effect of the space charge is that the field in the insulator at the electrode interface is different from the field with no space charge, and that the triangular shape of the potential barrier is distorted. If only the alteration of the cathode field is taken into account, as is often the case, the effect of the space charge is overestimated. Explicit solutions are found for the case of constant space charge, where the effect of the shape distortion can be described in terms of a single parameter, which is different for the two injection mechanisms considered—zero temperature tunneling and thermionic emission over the potential barrier. For either mechanism, however, the parameter is a measure of the ratio of the charge on the electrode to the charge contained within a characteristic distance—the charge-free tunneling distance for tunneling injection or the position of the charge-free potential maximum for thermionic injection.
Thermionic emission
Schottky effect
Rectangular potential barrier
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A closed-form and physics-based compact model is presented for calculating the DC characteristics of Schottky barrier field-effect transistors and dual gated reconfigurable field-effect transistors. The given model calculates the charge-carrier injection over the Schottky barriers. This current is separated into a field emission current, given by charge carriers tunneling through the Schottky barriers and a thermionic emission current, given by charge carriers overcoming the Schottky barriers. The model verification is done by comparing the model results to measurements and TCAD simulations.
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We present a theoretical model to describe electrical spin injection from a ferromagnetic contact into a conjugated organic semiconductor. In thermal equilibrium the magnetic contact is spin polarized, whereas the organic semiconductor is unpolarized. The organic semiconductor must be driven far out of local thermal equilibrium by an electric current to achieve significant spin current injection. However, if the injecting contact has metallic conductivity, its electron distribution cannot be driven far from thermal equilibrium by practical current densities. Thus, quasi-equilibration between the conjugated organic semiconductor and the metallic contact must be suppressed to achieve effective spin injection. This requires a spin-dependent barrier to electrical injection that may be due either to tunneling through the depletion region of a large Schottky barrier or to tunneling through a thin, insulating, interface layer. Schottky barrier formation on conjugated organic semiconductors differs from that on inorganic semiconductors inasmuch as contacts made to organic semiconductors often follow near-ideal Schottky behavior, thus permitting the energy barrier to electrical injection to be varied over a wide range by using metals with different work functions. In addition, insulating tunnel barriers to organic semiconductors based on organic molecules can be conveniently fabricated using self-assembly techniques.
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Metal–semiconductor junction
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High-field conduction and space-charge formation in polypropylene (PP) film at high temperatures was studied by measuring charging and discharge currents. The electric-field dependence of the charging current was divided into three regions: the low-, the medium-, and the high-field region. In the high-field region, the increase of the charging current with electric field is depressed from the Schottky line, and anomalous discharging currents which flow in the same direction as the charging currents were observed. The appearance depended on the anode metal rather than the cathode and was most remarkable under the condition of an Au anode and Al cathode. The breakdown tests were also made at 100 degrees C with different combinations of electrode metals. The samples with the Au anode showed a lower breakdown strength than those with the Al anode. These processes may be caused by the hetero-space charge formation near the anode.< >
Polypropylene
Schottky effect
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Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation B. P. Modi, K. D. Patel; Flat band Barrier Height of In‐pSi Schottky Diode. AIP Conf. Proc. 15 July 2011; 1349 (1): 773–774. https://doi.org/10.1063/1.3606087 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioAIP Conference Proceedings Search Advanced Search |Citation Search
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