Dependence of Schottky Barrier Height on Metal Work Function
4
Citation
2
Reference
10
Related Paper
Citation Trend
Abstract:
The Schottky barrier diodes were fabricated on n‐Si (100) using gold and platinum having different work functions. Aluminum was deposited on one side of Si and annealed to make good ohmic contacts. The junction parameters like ideality factor and Schottky barrier height were calculated from the I‐V characteristics. It has been observed that the Schottky barrier height of our Schottky diodes shows a very weak dependence on the metal work function indicating the dominance of interface states which cause the Fermi level pinning.Keywords:
Ohmic contact
Metal–semiconductor junction
Schottky effect
Ohmic contact
Metal–semiconductor junction
Cite
Citations (14)
We present experimental results on current injection from different metal electrodes into copper–phthalocyanine (Cu–Pc). The current–voltage (J–V) characteristics and current injected at the contact are investigated as a function of Schottky energy barrier, thickness of organic semiconductor, and temperature. These results are interpreted using a consistent description of J–V characteristics through the injection limited current in the case of high Schottky energy barriers and space charge limited current in the case of low Schottky energy barrier.
Schottky effect
Metal–semiconductor junction
Organic semiconductor
Cite
Citations (80)
The influence of the sidegate voltage on the Schottky barrier in the ion-implanted active layer via the Schottky pad on the semi-insulating GaAs substrate was observed, and the mechanism for such an influence was proposed.
Metal–semiconductor junction
Schottky effect
Barrier layer
Active layer
Cite
Citations (0)
In this work ballistic electron emission microscopy was used to probe on nanometer scale the local Schottky barrier height in metal-semiconductor (MS) contacts with an intentionally inhomogeneously prepared metallization. Schottky barrier maps of heterogeneous Au/Co/GaAs67P33(100)-Schottky contacts show areas with different barrier heights which can be correlated to different metallizations (Au or Co) at the interface. The local Schottky barrier height of the Co patches depends on their lateral extension. This result can be explained by the theory of the potential pinch-off effect in inhomogeneous MS contacts.
Metal–semiconductor junction
Schottky effect
Nanometre
Cite
Citations (43)
The relationship between the contact type in metal-semiconductor junctions and their photocatalytic efficiencies is investigated. Two metal-semiconductor junctions, silver on zinc oxide (Ag/ZnO) and platinum on zinc oxide (Pt/ZnO) serve as model system for Ohmic and Schottky metal-semiconductor contact, respectively. Ag/ZnO, with Ohmic contact, exhibits a higher photocatalytic efficiency than Pt/ZnO, with Schottky contact. The direction of electric fields within the semiconductor is found to play a crucial role in the separation of photogenerated charges, and thus strongly influences the photocatalytic efficiency.
Ohmic contact
Metal–semiconductor junction
Wide-bandgap semiconductor
Cite
Citations (119)
We discuss experimental properties and possibilities of the maximum barrier height assessment for low Schottky barrier heights which have apparently Ohmic I–V curves. It is shown that the usage of numerical methods for low barrier height parameters extraction is very useful. We discuss the properties of the Schottky contacts with the same barrier heights but different semiconductor doping concentrations. For such contacts there can be an accumulation or depletion layer at the semiconductor surface for the same barrier height depending on the doping concentration. I–V curves of such structures have similar character, but a rather large difference can be expected in C–V curves.
Ohmic contact
Metal–semiconductor junction
Barrier layer
Schottky effect
Cite
Citations (8)
A closed-form and physics-based compact model is presented for calculating the DC characteristics of Schottky barrier field-effect transistors and dual gated reconfigurable field-effect transistors. The given model calculates the charge-carrier injection over the Schottky barriers. This current is separated into a field emission current, given by charge carriers tunneling through the Schottky barriers and a thermionic emission current, given by charge carriers overcoming the Schottky barriers. The model verification is done by comparing the model results to measurements and TCAD simulations.
Cite
Citations (12)
Hole Schottky barrier heights on GaAs have been studied experimentally by using a conventional metal–semiconductor–metal photodetector (MSMPD) structure. The Schottky barrier height for holes was obtained directly by the hole-current dominated dark current measurement of the MSMPD. With a thin, highly doped surface layer, control of the Schottky barrier heights for holes from 0.48 to 0.79 eV was obtained. By using these engineered Schottky contacts in the MSMPDs, over three orders of magnitude reduction in the dark currents of the MSMPDs was achieved.
Metal–semiconductor junction
Schottky effect
Depletion region
Cite
Citations (5)
Although the two-dimensional transition metal dichalcogenides (TMDs) present excellent electrical properties, the contact resistance at the interface of metal/TMDs limits the device performance. Herein, we use 2D metallic Fe3GeTe2 (FGT) as an electrode in contact with TMDs semiconductors MX2 (M = Mo, W; X = S, Se, Te) and investigate the contact properties of FGT/MX2 based on density functional theory calculations. We demonstrated that FGT/MX2 presents n-type Schottky contacts, and their n-type Schottky barrier heights are lower than that of the most common bulk metal contacts with MX2, suggesting that FGT can be used as an efficient metallic electrode for MX2. The transitions from n-type Schottky contact to p-type Schottky contact and from Schottky contact to Ohmic contact can be achieved in FGT/MX2 under the electric field. This work not only illustrates an effective method to modulate the contact types and Schottky barrier heights of FGT/MX2 contacts but also provides a route for designing the nanodevices based on FGT/MX2 electrical contacts.
Ohmic contact
Contact resistance
Metal–semiconductor junction
Electrical contacts
Cite
Citations (8)
The rectifying Schottky characteristics of the metal-semiconductor junction with high contact resistance have been a serious issue in modern electronic devices. Herein, we demonstrated the conversion of the Schottky nature of the Ni-Si junction, one of the most commonly used metal-semiconductor junctions, into an Ohmic contact with low contact resistance by inserting a single layer of graphene. The contact resistance achieved from the junction incorporating graphene was about 10(-8) ~ 10(-9) Ω cm(2) at a Si doping concentration of 10(17) cm(-3).
Ohmic contact
Contact resistance
Metal–semiconductor junction
Electrical junction
Equivalent series resistance
Cite
Citations (107)