Influence of three-dimensional p-buried layer pattern on the performance of 4H-SiC floating junction Schottky barrier diode
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Abstract:
4H-SiC floating junction Schottky barrier diodes (FJ-SBDs) are excellent SiC devices with high Baliga's figure of merit (BFOM). However, the p-type buried layers in epilayers partially obstruct the current paths, and increase the on-resistance, while the buried layers of dot patterns can reduce the obstruction. In this paper, a three-dimensional (3D) simulation of 4H-SiC FJ-SBDs with dot patterns is reported for the first time. By comparing the results obtained from stripe, square, octagon, and circle patterns, dot patterns are proved to be good choices for buried layers in 4H-SiC FJ-SBDs, and the FJ-SBD with the circle pattern has the highest BFOM of 12.09 GW/cm2, which is 22.62% greater than that of the FJ-SBD with the stripe pattern.Keywords:
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We have studied current–voltage characteristics of two back‐to‐back connected Schottky diodes. In many semiconductor devices, we need to prepare one Schottky contact and the second contact should be ohmic. We show that even in the case when the second contact is also of Schottky type but with different barrier height, current–voltage characteristic remains very similar as that of single Schottky diode. The existence of the second Schottky diode with lower‐barrier height may not be detectable by inspecting I – V curves of such structure. The analysis and Schottky diode parameter extraction also may not be able to disclose existence of two Schottky contacts in the studied structure. The structure behaves as it would be one single Schottky contact. This knowledge may be used in technology where in many cases the ohmic contact may be substituted by another Schottky contact with lower‐barrier height.
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Metal-semiconductor (M-S) contacts at subnanometer scale have exhibited interesting Schottky characteristics. The observed rectification behavior cannot be explained in the light of the conventional planar-Schottky model and needs to consider the Physics of nano-Schottky junction at very small dimensions. In this work, the effect of M-S contact size on the (1-V) characteristic is investigated. We used a modified nano-Schottky model to calculate the new depletion width, the enhanced surface potential, and the enhanced electric field at the interface which significantly affect the (I-V) characteristic. The experimental (I-V) plot for 7 nm metal tip was used to fit the parameters in the nano-Schottky model. The nano-Schottky model was used to simulate (I-V) plots for various diameters of metal tip contacts (7-100 nm). The results clearly demonstrate the transition in the (I-V) Schottky reversed rectification behavior from sub-10 nm contacts to the conventional (I-V) Schottky behavior at around 100 nm contacts.
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We have proposed and fabricated high performance of AlGaN/GaN Schottky Barrier Diodes (SBDs) with various Schottky contact. The breakdown voltage of proposed SBDs with the TaN and ITO Schottky contact deposited by RF sputtering method was increased compared to the widely used Ni/Au Schottky contact. The extracted Schottky barrier height (SBH) of TaN and ITO was 0.62 eV and 0.54 eV respectively while that of Ni/Au was 0.51 eV. The reverse blocking characteristics such as the leakage current and breakdown voltage was improved by TaN and ITO Schottky contact due to its high SBH. However, forward current of TaN and ITO Schottky contact was less than that of Ni/Au Schottky contact. The TaN Schottky SBDs achieved highest breakdown voltage of 605 V and ITO Schottky SBDs achieved 472 V. On the contrary, the breakdown voltage of Ni/Au Schottky SBDs exhibits 335 V.
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This chapter contains sections titled: Historical Background of Schottky Contacts on ZnO Recent Schottky Barrier Studies The Influence of Surface Preparation on Schottky Barriers The Influence of Defects on Schottky Barriers The Influence of ZnO Polarity on Schottky Barriers The Influence of Chemistry Charge Transport and Extended Metal–ZnO Schottky Barriers Conclusion Acknowledgements References
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It has been shown how combined diodes, consisting of merged Schottky and pn areas, have higher current capability than conventional pn diodes. By studying the interaction between separated and closely located Schottky and pn diodes the function of the combined diode is explained.
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