Various Schottky Contacts of AlGaN/GaN Schottky Barrier Diodes (SBDs)
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We have proposed and fabricated high performance of AlGaN/GaN Schottky Barrier Diodes (SBDs) with various Schottky contact. The breakdown voltage of proposed SBDs with the TaN and ITO Schottky contact deposited by RF sputtering method was increased compared to the widely used Ni/Au Schottky contact. The extracted Schottky barrier height (SBH) of TaN and ITO was 0.62 eV and 0.54 eV respectively while that of Ni/Au was 0.51 eV. The reverse blocking characteristics such as the leakage current and breakdown voltage was improved by TaN and ITO Schottky contact due to its high SBH. However, forward current of TaN and ITO Schottky contact was less than that of Ni/Au Schottky contact. The TaN Schottky SBDs achieved highest breakdown voltage of 605 V and ITO Schottky SBDs achieved 472 V. On the contrary, the breakdown voltage of Ni/Au Schottky SBDs exhibits 335 V.Keywords:
Metal–semiconductor junction
Reverse leakage current
We investigated the electrical properties and reverse leakage mechanisms of Pt/n-Ge Schottky contacts with copper phthalocyanine (CuPc) as an interlayer. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Schottky contacts were used to evaluate Schottky barrier parameters such as ideality factor, barrier height, and series resistance. The barrier heights and ideality factors measured from the forward bias I-V characteristics were found to be 0.50 eV and 1.06 for Pt/n-Ge Schottky contact, and 0.58 eV and 1.31 for Pt/CuPc/n-Ge Schottky contact, respectively. Cheung method was used to measure the series resistances of the Schottky contacts, and the consistency was checked using the Norde method. The reverse leakage conduction mechanism of the Schottky contacts was investigated. Pt/CuPc/n-Ge Schottky contacts showed a transition from Schottky emission to Poole-Frenkel emission at a higher bias range. This could be associated with the high density of structural defects or traps associated with the organic material.
Metal–semiconductor junction
Equivalent series resistance
Reverse leakage current
Schottky effect
Leakage (economics)
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The In/Nb-doped SrTiO-3 Schottky Junctions, fabricated using a proper surface treatment of the STO:Nb and in situ deposition of In, were investigated in detail. Current-voltage characteristics have shown the differences with the ideal Schottky Junctions about temperature-dependent and voltage-dependent changes, Using a Schottky transport theory, we have performed computer simulation of the parameters to analyze the differences of the Schottky Junctions. As the new oxides semiconductor material there should be many departures in the Schottky junctions.
Metal–semiconductor junction
Schottky effect
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This chapter reviews the status of SiC Schottky barrier diode development. The fundamentals of Schottky barrier diodes are first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes and merged-pin-Schottky diodes. The development history is reviewed and the key performance parameters are discussed. Applications of SiC SBDs in power electronics circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.
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Wide-bandgap semiconductor
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The reduction of reverse leakage currents was attempted to fabricate 4H-SiC diodes with large current capacity for high voltage applications. Firstly diodes with Schottky metal of titanium (Ti) with active areas of 2.6 mm2 were fabricated to investigate the mechanisms of reverse leakage currents. The reverse current of a Ti Schottky barrier diode (SBD) is well explained by the tunneling current through the Schottky barrier. Then, the effects of Schottky barrier height and electric field on the reverse currents were investigated. The high Schottky barrier metal of nickel (Ni) effectively reduced the reverse leakage current to 2 x 10-3 times that of the Ti SBD. The suppression of the electric field at the Schottky junction by applying a junction barrier Schottky (JBS) structure reduced the reverse leakage current to 10-2 times that of the Ni SBD. JBS structure with high Schottky barrier metal of Ni was applied to fabricate large chip-size SiC diodes and we achieved 30 A- and 75 A-diodes with low leakage current and high breakdown voltage of 4 kV.
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Abstract SiC Junction Barrier Schottky (JBS) Rectifier is a kind of unipolar power diode with low threshold voltage and high reverse blocking voltage. And the Schottky barrier Φ BN is a main technology parameter, which could greatly affect the forward conduction power and reverse leakage current in the JBS rectifiers. Therefore, it is necessary to balance the influence of Φ BN on the electrical characteristics of JBS rectifiers. In this paper, physical properties at the metal-semiconductor at the Schottky-contact could be optimized by the improvement of Schottky-contact process. And this optimization could significantly decrease Φ BN to reduce the on-state voltage drop V F and minimize negative impact on its reverse characteristics. After the completion of Silicon carbide JBS diodes, the static parameter electrical test was carried out on the wafer by using Keysight B1505A Power Device Analyzer/Curve Tracer. The test results show that the Schottky barrier height Φ BN of JBS Schottky rectifier manufactured by the modified Schottky foundation technology decreased from 1.19eV to 0.99eV and I R increased from 1.08μA to 3.73μA (reverse blocking voltage V R =1200V). It indicated that the power consumption of Schottky barrier junction in JBS rectifiers could be significantly reduced by about 25%, and I R could effectively be limited to less than 10μA.
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Reverse leakage current
Rectifier (neural networks)
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We have studied current–voltage characteristics of two back‐to‐back connected Schottky diodes. In many semiconductor devices, we need to prepare one Schottky contact and the second contact should be ohmic. We show that even in the case when the second contact is also of Schottky type but with different barrier height, current–voltage characteristic remains very similar as that of single Schottky diode. The existence of the second Schottky diode with lower‐barrier height may not be detectable by inspecting I – V curves of such structure. The analysis and Schottky diode parameter extraction also may not be able to disclose existence of two Schottky contacts in the studied structure. The structure behaves as it would be one single Schottky contact. This knowledge may be used in technology where in many cases the ohmic contact may be substituted by another Schottky contact with lower‐barrier height.
Metal–semiconductor junction
Ohmic contact
Equivalent series resistance
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Metal-semiconductor (M-S) contacts at subnanometer scale have exhibited interesting Schottky characteristics. The observed rectification behavior cannot be explained in the light of the conventional planar-Schottky model and needs to consider the Physics of nano-Schottky junction at very small dimensions. In this work, the effect of M-S contact size on the (1-V) characteristic is investigated. We used a modified nano-Schottky model to calculate the new depletion width, the enhanced surface potential, and the enhanced electric field at the interface which significantly affect the (I-V) characteristic. The experimental (I-V) plot for 7 nm metal tip was used to fit the parameters in the nano-Schottky model. The nano-Schottky model was used to simulate (I-V) plots for various diameters of metal tip contacts (7-100 nm). The results clearly demonstrate the transition in the (I-V) Schottky reversed rectification behavior from sub-10 nm contacts to the conventional (I-V) Schottky behavior at around 100 nm contacts.
Metal–semiconductor junction
Schottky effect
Electrical contacts
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We have proposed and fabricated high performance of AlGaN/GaN Schottky Barrier Diodes (SBDs) with various Schottky contact. The breakdown voltage of proposed SBDs with the TaN and ITO Schottky contact deposited by RF sputtering method was increased compared to the widely used Ni/Au Schottky contact. The extracted Schottky barrier height (SBH) of TaN and ITO was 0.62 eV and 0.54 eV respectively while that of Ni/Au was 0.51 eV. The reverse blocking characteristics such as the leakage current and breakdown voltage was improved by TaN and ITO Schottky contact due to its high SBH. However, forward current of TaN and ITO Schottky contact was less than that of Ni/Au Schottky contact. The TaN Schottky SBDs achieved highest breakdown voltage of 605 V and ITO Schottky SBDs achieved 472 V. On the contrary, the breakdown voltage of Ni/Au Schottky SBDs exhibits 335 V.
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Reverse leakage current
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Metal–semiconductor junction
Equivalent series resistance
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This chapter contains sections titled: Historical Background of Schottky Contacts on ZnO Recent Schottky Barrier Studies The Influence of Surface Preparation on Schottky Barriers The Influence of Defects on Schottky Barriers The Influence of ZnO Polarity on Schottky Barriers The Influence of Chemistry Charge Transport and Extended Metal–ZnO Schottky Barriers Conclusion Acknowledgements References
Metal–semiconductor junction
Polarity (international relations)
Schottky effect
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