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    Conventional and rapid thermal annealing of spray pyrolyzed copper indium gallium sulfide thin films
    Journal of Alloys and Compounds (2014)
    Erkan AydınMehmet SankırNurdan Demirci Sankır
    24
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    10
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    Keywords:
    Spray pyrolysis
    Copper sulfide
    Topics:
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    Conventional and rapid thermal annealing of spray pyrolyzed copper indium gallium sulfide thin films
    Journal of Alloys and Compounds (2014)
    Erkan AydınMehmet SankırNurdan Demirci Sankır
    Spray pyrolysis
    Copper sulfide
    Citations (24)
    ChemInform Abstract: PHASE RELATIONS AND INTERMEDIATE COMPOUNDS IN GAX3 ‐GALLIUM SULFIDE AND INX3 ‐INDIUM SULFIDE SYSTEMS (X = CL, BR, I)
    Chemischer Informationsdienst (1985)
    Rüdiger KniepWilfried Welzel
    Abstract Die Titelsysteme sind quasibinär und enthalten jeweils eine intermediäre inkongruent schmelzende Verbindung der Zusammensetzung (Ga,In)SX.
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    Gallium(III) and indium(III) dithiolate complexes: Versatile precursors for metal sulfides
    Journal of Chemical Sciences (2007)
    Shamik GhoshalVimal K. Jain
    Dithiocarbamate
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    Transformation of Indium and Gallium Metal into Mixed Group 11/13 Ternary Sulfide Nanoparticles by Using a Dithioic Acid
    ChemPlusChem (2018)
    Dimuthu C. SenevirathnaLeone SpicciaMelissa V. WerrettPhilip C. Andrews
    Heterobimetallic Group 11/13 sulfide nanoparticles (AgInS2 , CuInS2 , Ag9 GaS6 , and CuGaS2 ) are formed by treatment of [M(S2 CAr)3 ] (M=Ga or In) with either AgNO3 or CuCl under mild conditions. The intermediary gallium or indium tris(aryldithioate) complexes are easily prepared by stirring the appropriate metal and aryldithioc acid at room temperature. Overall, this two-step process is a simple solution-based method for transforming Ga and In metal into valuable ternary metallosulfide nanoparticles at relatively low temperatures.
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    A wheel-shaped gallium-sulfide molecular ring with enhanced photocatalytic activity via indium alloying
    Inorganic Chemistry Frontiers (2023)
    Tao WuBing HanJiaxin LiuJiaxu ZhangChaozhuang Xue
    An counterpart-shaped gallium-sulfide molecular ring with its indium alloyed one toward efficient photocatalytic dye degradation and comparable photocatalytic hydrogen production.
    Degradation
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    Electronic Materials Letters (2014)
    S. SalariMehdi AhmadiKavoos Mirabbaszadeh
    Dip-coating
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    ChemInform Abstract: THE PHASE RELATIONS IN THE COPPER, INDIUM, SULFUR SYSTEM AND THE GROWTH OF COPPER INDIUM SULFIDE (CUINS2) CRYSTALS FROM THE MELT
    Chemischer Informationsdienst (1982)
    F. A. Thiel
    Abstract Liquidus‐Messungen im Cu,In,S‐System entlang dem pseudobinären Cumslnms‐Szeigen einen Schmelzpunkt von 1 l 15°C für CuInSQ.
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    Nanosecond Nd:YAG laser induced backside wet etching of NaCl with eutectic gallium-indium alloy as absorbing liquid
    Surfaces and Interfaces (2019)
    Xiongtao ZhaoMartin EhrhardtPierre LorenzBing HanK. Zimmer
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    Structural and optical characterization of indium and gallium indium sulfide films prepared by modulated flux deposition
    physica status solidi (a) (2007)
    C. SanzC. GuillénM.T. Gutiérrez
    Abstract Indium and gallium indium sulfide thin films were deposited on soda‐lime glass substrates at 350 °C, in a wide range of sulfur delivery conditions, by Modulated Flux Deposition (MFD). Indium sulfide films were highly crystalline β‐In 2 S 3 (tetragonal) with E g = 2.68 eV. Depending on the availability of sulfur, gallium indium‐poor sulfide films consisted on metal‐rich hexagonal β‐GaS layers or stoichiometric amorphous films with E g = 3.0–3.3 eV. Finally, gallium indium‐rich sulfide films formed a mixture of β‐In 2 S 3 and β‐GaS that became near amorphous as more sulfur was supplied; a bandgap energy of E g = 2.44 eV was found. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
    Tetragonal crystal system
    Deposition
    Stoichiometry
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