BEOL process integration for the 7 nm technology node

Theodorus E. Standaert,Genevieve Beique,H. Chen,S. T. Chen,Bassem Hamieh,Joe Lee,P. McLaughlin,J. McMahon,Yann Mignot,Frank W. Mont,K. Motoyama,Son Van Nguyen,R. Patlolla,B. Peethala,Deepika Priyadarshini,Michael Rizzolo,Nicole Saulnier,Hosadurga Shobha,S. Siddiqui,Terry A. Spooner,Hao Tang,O. van der Straten,Erik Verduijn,Yongan Xu,Xunyuan Zhang,John C. Arnold,D. Canaperi,M. Colburn,Daniel C. Edelstein,Vamsi Paruchuri,Griselda Bonilla

BEOL process integration for the 7 nm technology node

2016

A 36 nm pitch BEOL has been evaluated for the 7 nm technology node. EUV lithography was employed as a single-exposure patterning solution. For the first time, it is shown that excellent reliability results can be obtained for Cu interconnects at these small dimensions, by using a TaN/Ru barrier system and a selective Co cap.

Keywords:

Electronic engineering
X-ray lithography
Nanotechnology
Immersion lithography
Materials science
Photolithography
Extreme ultraviolet lithography
Next-generation lithography
Process integration
Multiple patterning

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