A new non-linear electrothermal 3D spline model with charge integration for power FETs

A new 3D table-based model for microwave field effect transistors is proposed. This non-linear electrothermal model depends on three variables: the gate-source voltage Vgs, the drain-source voltage Vds and the junction temperature T of the device. These three commands drive five non-linearities: the input current source Ig, the drain current source Id and the capacities Cds, Cgs and Cgd. This paper describes the extraction of the model and its implementation in a CAD software. Its extraction from pulsed I(V) and S parameter measurements is very fast and doesn't require any optimization process. As an example, the modelling of a silicon carbide (SiC) power FET and simulation results are presented in order to show the capabilities of this model.