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P. Bouysse
P. Bouysse
University of Limoges
Electronic engineering
Engineering
Electrical engineering
Amplifier
High-electron-mobility transistor
9
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34
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An Experimental Study for the Design of Dual Input Load Modulated Wideband GaN Amplifier
2019
EuMC | European Microwave Conference
A. Courty
Tibault Reveyrand
Pierre Medrel
P. Bouysse
J.M. Nebus
G. Soubercaze-Pun
Luc Lapierre
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Efficiency enhancement of GaN power HEMTs by controlling gate-source voltage waveform shape
2009
EuMC | European Microwave Conference
Alaaeddine Ramadan
Audrey Martin
Tibault Reveyrand
J.M. Nebus
P. Bouysse
L. Lapierre
J.F. Villemazet
Stéphane Forestier
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A new non-linear electrothermal 3D spline model with charge integration for power FETs
2005
EuMC | European Microwave Conference
Cyril Lagarde
Jean-Pierre Teyssier
P. Bouysse
R. Quere
C. Charbonniaud
O. Jardel
H. Bousbia
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New trends in characterization and modeling of High Power devices
2001
P. Bouysse
Denis Barataud
Raphaël Sommet
Jean-Pierre Teyssier
J.M. Nebus
R. Quere
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Nonlinear characterization of microwave transistors by the means of pulsed I(V) and pulsed S-Parameters measurements
1999
Jean-Pierre Teyssier
Denis Barataud
A. Laloue
P. Bouysse
R. Quere
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