High Performance pMOSFET with ALD-TiN/HfO2 Gate Stack on (110) Substrate by Low Temperature Process

We have developed a high performance pMOSFET with ALD-TiN/HfO 2 gate stacks on (110) substrate using gate last process at low temperature. High work function and low gate leakage current are obtained. An extremely high mobility equivalent to P+poly-Si/SiO 2 on (110) substrate (171 cm 2 /Vs at 0.5 MV/cm) is achieved with ALD-TiN/HfO 2 on (110) substrate in the thinner Tinv region of 1.7 nm. Vth roll-off characteristics are well controlled down to 50 nm. A high drive current of 380 uA/um at I off = 1 uA/um is achieved at Vdd = 1.0 V. The drive current of ALD-TiN/HfO 2 gate stack on (110) substrate is improved 1.4 times compared with (100) substrate and 2.4 times compared with P+poly-Si/SiO 2 on (100) substrate