Refractory metal silicide formation by ion beam mixing and rapid thermal annealing

We have shown that uniform, stoichiometric, low‐resistivity refractory metal silicides (MoSi2 and WSi2) can be formed by implanting As ions through respective metal films (Mo and W) deposited on Si and rapid thermal annealing. Rapid diffusion of the implanted As ions is observed during the formation of the metal silicides.