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D. L. Kwong

University of Notre Dame

13

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229

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Current‐voltage characteristics of ion‐implanted metal‐semiconductor field effect transistor

1985 Journal of Applied Physics
- D. L. Kwong
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Refractory metal silicide formation by ion beam mixing and rapid thermal annealing

1985 Applied Physics Letters
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Simultaneous Formation of Silicide Ohmic Ion-Beam Mixing and Rapid Thermal Annealing and Shallow Contacts p +-n Junctions by

1985 IEEE Electron Device Letters
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Breakdown voltages of ion‐implanted junctions

1985 Journal of Applied Physics
- D. C. Meyers
- D. L. Kwong
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Effect of Furnace Preanneal and Rapid Thermal Annealing on Arsenic‐Implanted Silicon

1985 Journal of The Electrochemical Society
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Simultaneous formation of silicide ohmic contacts and shallow p + -n junctions by ion-beam mixing and rapid thermal annealing

1985 IEEE Electron Device Letters
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Composite TaSi 2 /n + poly-Si formation by rapid thermal annealing

1984 IEEE Electron Device Letters
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Calculation of the threshold voltage of metal‐oxide‐semiconductor field‐effect transistors with Pearson‐IV channel doping profile

1984 Journal of Applied Physics
- D. L. Kwong
- D. C. Meyers
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Rapid thermal annealing of co-sputtered tantalum silicide films

1984 Thin Solid Films
- D. L. Kwong
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Rapid thermal annealing characteristics of As+‐ and BF+2 ‐implanted Si

1984 Applied Physics Letters
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Citations (18)