EUV mask black border evolution
2014
The black border is a frame created by removing all the multilayers on the EUV mask in the region
around the chip. It is created to prevent exposure of adjacent fields when printing an EUV mask on a
wafer. Papers have documented its effectiveness. As the technology transitions into
manufacturing, the black border must be optimized from the initial mask making process through its
life. In this work, the black border is evaluated in three stages: the black border during fabrication,
the final sidewall profile, and extended lifetime studies.
This work evaluates the black border through simulations and physical experiments. The simulations
address concerns for defects and sidewall profiles. The physical experiments test the current black
border process. Three masks are used: one mask to test how black border affects the image
placement of features on mask and two masks to test how the multilayers change through extended
cleans. Data incorporated in this study includes: registration, reflectivity, multilayer structure images
and simulated wafer effects.
By evaluating the black border from both a mask making perspective and a lifetime perspective, we
are able to characterize how the structure evolves. The mask data and simulations together predict
the performance of the black border and its ability to maintain critical dimensions on wafer. In this
paper we explore what mask changes occur and how they will affect mask use.
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
5
References
4
Citations
NaN
KQI