Study of electric-field-induced-development method
2009
Mask development process for 2x nm node devices needs stringent CD uniformity and CD linearity. To evaluate and
improve these CD qualities, we proposed to introduce electric-field-induced-development method into proximity gap suction
development system (PGSD). It is the way to develop with applying electric potential to the metallic development nozzle to
stimulate the movement of hydroxide ions. In this paper, we will report the effect of electric-field-induced-development
method on CD uniformity and CD linearity.
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