A Novel Approach to Localize the Channel Temperature Induced by the Self-heating Effect in 14nm High-k Metal-gate FinFET

For the first time, RTN measurement is utilized to measure the temperature (T) distribution along the channel, induced by Self-heating effect(SHE). The results have shown that the channel temperature of 14nm pFinFET is 170K higher than that of nFinFET as a result of the difficulty of heat dissipation in eSiGe S/D of pFinFET. This has been justified by a Spice built-in model to extract the necessary parameters. In nFinFET, although S/D series resistance (R sd ) dominates at room T, the channel resistance (R c ) is larger than R sd at a higher T because of degradation of saturation velocity caused by SHE. On the other hand, in pFinFET, R c dominates at low and high T, and R sd becomes significant at high T because of embedded high thermal-resistance material, SiGe, in S/D. This has been justified by the mobility reduction due to the increment of phonon scattering induced by SHE. Finally, the impact of SHE on the shrinking of SRAM signal-to-noise ratio has been used as a benchmark test. New findings provide valuable information on the understanding of SHE-resistant design of future generation FinFET devices.