Back Surface Plasmonic Grating for Increased Quantum Efficiency of nBn Photodetectors With Ultra-Thin Metamorphic InAs 0.8 Sb 0.2 Absorber

Using a 2D metallic grating, we demonstrate the resonant enhancement of the external quantum efficiency of an nBn structure with a 0.5 $\mu \text{m}$ -thick-absorber. A total of two structures were studied with different barrier materials: ternary AlInSb and an InAs/AlInSb superlattice (SL). The device using an SL barrier had a diffusion-limited dark current of 6.7 $\mu \text{A}$ /cm 2 at 150 K, which was four times lower than the ternary-barrier device. The surface plasmon polariton (SPP) resonance wavelength for devices with six different grating periods varied as predicted by simulations. The quantum efficiency (QE) was enhanced by up to 56% by coupling to the SPP mode. A peak external QE of 39% was achieved at $4~\mu \text{m}$ with a 1100 nm grating period.