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Acemap > Paper > Effect of High Pressure Oxygen Annealing (HPOA) on the Electrical Characteristics of Metal-Alumina-Nitride-Oxide-Silicon (MANOS)-type Flash Memory Devices

Effect of High Pressure Oxygen Annealing (HPOA) on the Electrical Characteristics of Metal-Alumina-Nitride-Oxide-Silicon (MANOS)-type Flash Memory Devices

2008 
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