Improved Image Placement Performance of HL-7000M

HL-7000M electron beam (EB) lithography system has been developed as a leading edge mask writer for the generation of 90 nm node production and 65 nm node development. It is capable of handling large volume data files such as full Optical Proximity Correction (OPC) patterns and angled patterns for System on Chip (SoC). Aiming at the technological requirements of the International Technology Roadmap for Semiconductors (ITRS) 2002 Update, a newly designed electron optics column generating a vector-scan variable shaped beam and a digital disposition system with a storage area network technology have been implemented into HL-7000M. This new high-resolution column and other mechanical components have restrained the beam drift and fluctuation factors. The improved octapole electrostatic deflectors with new dynamic focus correction and gain alignment methods have been built into the object lens system of the column. These enhanced features are worth mentioning due to the achievement of HL-7000M's Image Placement (IP) performance. Its accuracy in 3σ of a 14 x 14 global grid matching result over an area of 135 mm x 135 mm measured by Leica LMS IPRO are X: 6.09 nm and Y: 7.85 nm. In addition, the shot astigmatism correction has been in the development and testing process and is expected to improve the local image placement accuracy dramatically.