Alternating Temperature Stress and Deduction of Effective Stress Levels from Mission Profiles for Semiconductor Reliability.

Mission profiles and step-stress life tests are depending on cumulative damage models for reliability analysis. Although cumulative damage models exist, they are rarely verified on empirical data of semiconductor devices. In this work, semiconductor devices from GLOBALFOUNDRIES’ 22FDX® technology are tested for dielectric breakdown. The applied stress is an alternating temperature step-stress and the results are compared with simulated failure behavior of the CE and TFR model for conformity. Also, the inferences from both models about the deduction of effective stress are discussed.