At 10 GHz and Beyond

2 Abstract This paper reports on the first unitary set of geometry-scalable, wide-hand compact models for all the components of a 0.13 pm RF CMOS technology and which are valid up to 50 GHz. Verification of the active and passive device models is achieved at the device level as well as by comparing measurements and simulation results of the S parameter response and jitter generation of high-speed circuits operating above 10 GHz from a single 1.2-V