Overlay considerations for 300-mm lithography

Generally, the potential impact of systematical overlay errors on 300mm wafers is much larger than on 200mm wafers. Process problems which are merely identified as minor edge yield detractors on 200mm wafers, can evolve as major roadblocks for 300mm lithography. Therefore, it is commonly believed that achieving product overlay specifications on 300mm wafers is much more difficult than on 200mm wafers. Based on recent results on high volume 300mm DRAM manufacturing, it is shown that in reality this assumption does not hold. By optimizing the process, overlay results can be achieved which are comparable to the 200mm reference process. However, the influence of non-lithographic processes on the overlay performance becomes much more critical. Based on examples for specific overlay signatures, the influence of several processes on the overlay characteristics of 300mm wafers is demonstrated. Thus, process setup and process changes need to be analyzed monitored much more carefully. Any process variations affecting wafer related overlay have to be observed carefully. Fast reaction times are critical to avoid major yield loss. As the semiconductor industry converts to 300mm technology, lithographers have to focus more than ever on process integration aspects.