Temperature Dependence of Spatially Resolved Picosecond Laser Induced Transients in a Deep Submicron CMOS Inverter

Spatially-resolved picosecond laser induced transients have been measured in a 0.18 mum CMOS inverter test structure as a function of temperature. Sensitive n -drain and p -drain nodes have been scaled in size to accommodate characteristic differences between ion and laser tracks. Images based on pulse characteristics have been collected from 325 K to 400 K and transient currents extracted from laser strikes to both the OFF drain and its surroundings. With increasing temperature strikes to the OFF drain result in a pulse width which appears to broadens whilst the charge collected surprisingly decreases.