Highly relaible (Pb,La)(Zr, Ti)O 3 ferroelectric capacitor with sputtered Sn-doped In 2 O 3 electrode

Ferroelectric random-access memory (FeRAM) is one of the promising candidates for future nonvolatile memory devices. Integration of higher density FeRAM requires more robust electrode material for capacitor reliability with easy etching capability to replace Pt electrodes. In this study, pulsed laser deposited (PLD) or DC sputtered Sn-doped $\mathrm {I}\mathrm {n}_{2}\mathrm {O}_{3}$ (ITO) was employed for bottom and top electrodes of (Pb,La)(Zr, Ti)O 3 (PLZT) capacitor. The ferroelectric properties of PLZT capacitors with ITO electrodes By PLD and sputtering were successfully obtained as ca. $50 \mu \mathrm {C}/\mathrm {c}\mathrm {m}^{2}$ and $60 \mu \mathrm {C}/\mathrm {c}\mathrm {m}^{2}$, respectively. It was found that D 2 degradation characteristics were stable even after 120 minutes D 2 exposure at $200^{\mathrm {o}}\mathrm {C}$.