Tailoring anomalous Nernst effect in stressed magnetostrictive film grown onto flexible substrate

The anomalous Nernst effect in nanostructured magnetic materials is a key phenomenon to optimally control and employ the internal energy dissipated in electronic devices, being dependent on for instance the magnetic anisotropy of the active element. Thereby, here we report a theoretical and experimental investigation of the magnetic properties and anomalous Nernst effect in a flexible magnetostrictive film with induced uniaxial magnetic anisotropy and under external stress. Specifically, we calculate the magnetization behavior and the thermoelectric voltage response from a theoretical approach for a planar geometry and with a magnetic free energy density which takes into account the induced uniaxial and magnetoelastic anisotropy contributions. Experimentally, we verify modifications of the effective magnetic anisotropy and thermoelectric voltage with the stress and explore the possibility of tailoring the anomalous Nernst effect in a flexible magnetostrictive film by modifying both, the magnetic field and external stress. We find quantitative agreement between experiment and numerical calculations, thus elucidating the magnetic and thermoelectric voltage behaviors, as well as providing evidence to confirm the validity of the theoretical approach to describe the magnetic properties and anomalous Nernst effect in ferromagnetic magnetostrictive films having uniaxial magnetic anisotropy and submitted to external stress. Hence, the results place flexible magnetostrictive systems as a promising candidate for active elements in functionalized touch electronic devices.