The impact of Al interfacial layer on resistive switching of La0.7Sr0.3MnO3 for reliable ReRAM applications

To acquire the reliable switching properties for ReRAM applications, we investigated the effect of Al interfacial layer on La"0"."7Sr"0"."3MnO"3 resistive switching. Using impedance spectroscopy method, we verified that the switching was induced by the change of Mn-O bonding chains by modulating the oxygen vacancies at top oxygen deficient layer, not the AlO"x formation. The device under nano-scale showed excellent retention properties at 125^oC and pulse switching endurance. Additionally, the good uniformity and yield properties under 4in. wafer were confirmed for the mass production.