Development of a new high transmission phase shift mask technology for 10 nm logic node
2016
In this paper we will describe the development of a new 12% high transmission phase shift mask technology for use
with the 10 nm logic node. The primary motivation for this work was to improve the lithographic process window for
10 nm node via hole patterning by reducing the MEEF and improving the depth of focus (DOF). First, the simulated
MEEF and DOF data will be compared between the 6% and high T PSM masks with the transmission of high T mask
blank varying from 12% to 20%. This resulted in selection of a 12% transmission phase shift mask. As part of this
work a new 12% attenuated phase shift mask blank was developed. A detailed description and results of the key
performance metrics of the new mask blank including radiation durability, dry etch properties, film thickness, defect
repair, and defect inspection will be shared. In addition, typical mask critical dimension uniformity and mask minimum
feature size performance for 10 nm logic node via level mask patterns will be shown. Furthermore, the results of work
to optimize the chrome hard mask film properties to meet the final mask minimum feature size requirements will be
shared. Lastly, the key results of detailed lithographic performance comparisons of the process of record 6% and new
12% phase shift masks on wafer will be described. The 12% High T blank shows significantly better MEEF and larger
DOF than those of 6% PSM mask blank, which is consistent with our simulation data.
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