Diodes based on semi‐insulating CdTe crystals with Mo/MoOx contacts for X‐ and γ‐ray detectors

This paper reports on the possible applications of molybdenum oxide (Mo/MoOx) contacts in combination with semi-insulating CdTe crystals. The electrical contacts to p-type Cl-doped CdTe crystals were formed by the deposition of molybdenum oxide and pure molybdenum thin films by the DC reactive magnetron sputtering. Electrical properties of the prepared Mo-MoOx/р-CdTe/MoOx-Mo surface-barrier structures were investigated at different temperatures. It is shown that the rapid growth of the reverse current with increasing bias voltage higher than 10 V is caused by the space-charge limited currents. Spectrometric properties of the Mo-MoOx/р-CdTe/MoOx-Mo structures have been also analyzed. It is revealed that the developed heterojunction has shown promising characteristics for its practical application in X- and γ-ray radiation detector fabrication.