AlGaN/GaN microwave power transistors for S band

Multifinger power transistors have been fabricated using AlGaN/GaN grown on insulating SiC by MOVPE. Using a 1 /spl mu/m gate length device, f/sub T/ of 10 GHz and f/sub MAX/ of 24 GHz were found for a 1 mm wide device. A total power of 10 W pulsed was obtained for a 10 mm wide device at 2.8 GHz.