DEEP DEFECT LEVELS IN DIODE STRUCTURES BASED ON GALLIUM PHOSPHIDE

We have studied the characteristic features of defect formation and generation of deep levels that control degradation processes in GaP diodes. We have shown that degradation of GaP diodes is mainly connected with the presence of defects in the space charge region of the p-n junction which are VGa-donor complexes, antistructural PGa defects, and also intrinsic VP structural defects with high density of localized states. We have established an interconnection between the degradation rate and the features of the energy spectrum of deep levels in GaP diodes, allowing us to use analysis of tunneling spectra for diagnostics of p-n junction quality and prediction of GaP diode degradation.